Goford Semiconductor
Goford Semiconductor

Ariat як дистрибютор касбии электронии Goford Semiconductor мебошад. Goford Semiconductor дастрас аст.
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Шуморо ба эътимоди калон ва дастгирӣ.

Image

Part Number

Description

ECAD
Model

Quote

N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4

P40V,RD(MAX)<18M@-10V,RD(MAX)<22

P-60V,-25A,RD(MAX)<70M@-10V,VTH-

N60V,14A,RD<8M@10V,VTH1.0V~2.4V,

N100V,RD(MAX)<130M@10V,RD(MAX)<1

P-60V,-3.5A,RD(MAX)<80M@-10V,VTH

N100V, 120A,RD<4.5M@10V,VTH2V~4V

N60V, 45A,RD<11M@10V,VTH1.0V~2.4

MOSFET, N-CH, 60V,45A,TO-252

N90V,60A,RD<25M@10V,VTH0.8V~2.5V

P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3

N60V, 90A,RD<12M@10V,VTH1.0V~2.4

N20V, 28A, RD<7.3M@4.5V,VTH0.5V~

N100V, 70A,RD<7.5M@10V,VTH1V~3V,

NP20V, 1.3A/-1.1A,RD<210M@4.5V,R

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

P-150V,-60A,RD(MAX)<80M@-10V,VTH

P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT

N100V,140A,RD<2.7M@10V,VTH2.7V~4

P-CH, -100V, 20A, RD(MAX)<116M@-

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

N100V, 8A,RD<130M@10V,VTH1V~3V,

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

N30V, 80A,RD<6.5M@10V,VTH1.0V~2.

P-60V,-4A,RD(MAX)<110M@-10V,VTH-

N100V,7A,RD<110M@10V,VTH1.0V~3.0

MOSFET N-CH 100V 3.4A SOT-23-6L

N60V,10A,RD<16M@10V,VTH1.2V~2.2V

NP60V, 5A/-3.1A,RD<36M/80M@10V/-

P+P -30V,RD(MAX)<60M@-10V,RD(MAX

N/P 100V,5A/-6A,RD(MAX)<170M/200

P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<

N40V,120A,RD<2.8M@10V,VTH1.0V~2.

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

P-CH, -60V, 65A, RD(MAX)<18M@-10

P-60V,25A,RD<70M@-10V,VTH1V~-2.5

N85V,200A,RD<3.0M@10V,VTH2.0V~4.

MOSFET P-CH ESD 150V 12A TO-252

N100V, 35A,RD<45M@10V,VTH1.5V~2.

P-100V,-12A,RD(MAX)<200M@-10V,VT

MOSFET, P-CH,-40V,-11A,RD(MAX)<8

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

N100V, 3A,RD<140M@10V,VTH1.0V~3.

N30V,RD(MAX)<12M@10V,RD(MAX)<13M

P-40V,-70A,RD(MAX)<7M@-10V,VTH-1

N60V, RD(MAX)<30M@10V,RD(MAX)<40

MOSFET P-CH 40V 222A TO-220

MOSFET N-CH 40V 30A DFN33-8L

N40V,120A,RD<2.8M@10V,VTH1.0V~2.

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